Modeling the effects of concentration-dependent carrier mobilities and self-heating on the resistance of thermal sensor built on thin silicon on insulator

摘要

Based on the minority-carrier exclusion theory, an analytical model is developed to explain the operating principle of thermal sensors fabricated on silicon-on-insulator in terms of the carrier-concentration distribution and the temperature dependence of the sensor resistance. The effects of temperature and carrier concentrations on carrier mobilities are included in the model. A two-region model is proposed to improve the resistance model at low bias current. The effect of self-heating on the sensor model is also considered.