Modeling of temperature sensor built on thin silicon on insulator using advanced carrier-mobility model

摘要

An analytical device model to study the characteristics of the temperature sensor built on thin silicon film was developed. The device had higher maximum operating temperature due to larger minority-carrier exclusion length. The carrier-concentration distribution in the minority-exclusion region, exclusion length and the temperature dependence of the sensor resistance of the model was verified by device simulation. The model can be used to study the principle of the minority-carrier exclusion effect and also to guide the design of temperature sensors built on thin silicon film for high-temperature applications.