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Photoconductivity and Photoconductive Gain in Organic Bulk Heterojunction Materials

机译:有机体异质结材料中的光电导和光电导增益

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A comprehensive study on photoconductive gain in organic bulk heterojunction (OBHJ) materials is reported. High photoconductive gains in OBHJs occur in operating regions where the device characteristics are dominated by photomodulated contact injection effects. The photomodulated injection current contributes to the total device current by augmenting the photocurrent resulting from photoabsorption in the device. An experimentally confirmed simulation of bulk photoconduction in lateral P3HT:PCBM bulk heterojunction blend devices is presented, and it clarifies the origins and operating regimes in these devices. High gains occur at lower light intensities, where the total device current is dominated by photomodulated contact injection rather than bulk photoconduction effects. At higher light intensities, the total device current is dominated by bulk photoconduction effects, where the photocurrent results from light absorption in the bulk material. In agreement with previous research, gains also increase with higher applied biases. The inclusion of field-dependent mobilities plays a critical role in accurately modeling this relationship between applied voltage bias and gain.
机译:报告了对有机体异质结(OBHJ)材料中光电导增益的综合研究。 OBHJ的高光电导增益发生在器件特性受光调制接触注入效应支配的工作区域中。光调制注入电流通过增加由器件中的光吸收导致的光电流来贡献总器件电流。提出了实验证实的横向P3HT:PCBM本体异质结共混器件中本体光电导的模拟,并阐明了这些器件的起源和工作方式。高增益在较低的光强度下发生,在此情况下,器件的总电流主要由光调制接触注入而不是整体光电导效应决定。在较高的光强度下,器件的总电流受本体光电导效应的控制,其中光电流来自本体材料中的光吸收。与先前的研究一致,增益也随着更高的应用偏置而增加。场相关迁移率的包含在精确建模施加的电压偏置和增益之间的关系方面起着至关重要的作用。

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