Drain-Current Flicker Noise Modeling in nMOSFETs From a 14-nm FDSOI Technology

摘要

Extensive investigation of the drain-current low-frequency noise in n-channel MOSFETs issued from a 14-nm fully depleted silicon-on-insulator technology node has been carried out. The results demonstrate that the carrier number fluctuation (CNF) with correlated mobility fluctuations (CMFs) model accurately and continuously describes the noise from weak to strong inversion, from linear to saturation, and for all the back-bias conditions. It is shown that using only two parameters, i.e., the effective flat-band voltage spectral density and CMF factor , the CNF/CMF noise model can predict the transistor noise level of all channel dimensions and under any bias conditions. Thus, it can be easily used in SPICE noise modeling for circuit simulations.