Characterization and modeling of drain current local variability in 28 and 14 nm FDSOI nMOSFETs

摘要

In this paper, we present, for the first time, a detailed investigation of the drain current local variability in advanced n-MOS devices from 28 and 14 nm FDSOI technology nodes. A simple MOSFET compact model is built to reproduce the local variability I-d-V-g characteristics of paired transistors using a Monte Carlo simulation with normally distributed MOSFET parameters (V-th, beta and R-sd). (C) 2016 Elsevier Ltd. All rights reserved.