Extraction of Schottky Barrier Parameters for Metal–Semiconductor Junctions on High Resistivity Inhomogeneous, Semiconductors

摘要

We present a novel method for the extraction of the relevant electrical and physical parameters of Schottky diodes realized on polycrystalline thin films. The proposed approach relies on a limited set of current–voltage characteristics measured at different temperatures and does not require the previous knowledge of any semiconductor parameter. The procedure provides satisfactory results in terms of relative errors even in the case of nonideal characteristics, including a very large series resistance and strong temperature and bias dependence of both barrier and ideality factor. We tested the approach on both simulated devices and real Cr–poly-Si Schottky diodes.