Printed Organic Circuits for Reading Ferroelectric Rewritable Memory Capacitors

摘要

We demonstrate an inkjet-printed organic thin-film transistor (OTFT) circuit for reading ferroelectric (FE) nonvolatile rewritable memories. With the large difference in polarization charge between FE memory states, we implement a single-OTFT gain stage with latch and show that a gain of -2.8 is sufficient to distinguish memory states. This paper evaluates the effect of device variations on the yield of this readout circuit.