Quasi-Analytical Model of 3-D Vertical-RRAM Array Architecture for MB-Level Design

摘要

This paper addresses the design challenges of simulating the 3-D vertical-resistive random access memory (V-RRAM) toward MB-level. The interconnect IR drop and sneak paths are known to be the limiting factors for building large-scale V-RRAM arrays. The previous approach to evaluate the write/read margin of V-RRAM was based on the exhaustive SPICE simulations, which prohibits the design exploration to MB-level as it takes huge amount of computation resources. In this paper, a quasi-analytical model is proposed, which aims to reduce the simulation time and the required memory usage. Through the validation with the SPICE simulation results, the proposed model shows a similar accuracy. Based on the proposed quasi-analytical model, the worst case data pattern of 3-D V-RRAM with large array size up to 4 MB is analyzed. The results show that it is more efficient to increase the number of stack layers than expanding the horizontal array size to achieve large subarray size.