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机译:Step JTE,用于特高压SiC功率器件的边缘终端,对JTE剂量和表面电荷的容忍度提高
Institute of Microelectronics, Tsinghua University, Beijing, China;
Institute of Microelectronics, Tsinghua University, Beijing, China;
Institute of Microelectronics, Tsinghua University, Beijing, China;
Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Mianyang, China;
Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Mianyang, China;
Silicon carbide; Junctions; Performance evaluation; Fabrication; Physics; PIN photodiodes; Electric breakdown;
机译:反掺杂JTE,一种用于HV SiC器件的边缘终端,具有更高的表面电荷容忍度
机译:改进的JTE剂窗口超高压SIC电源装置的高k增强耗尽JTE
机译:具有改进的JTE剂量窗的4H-SiC功率器件多环调制JTE技术
机译:用于特高压碳化硅功率器件的改进的蚀刻多步JTE
机译:功率碳化硅器件中的边缘端接和RESURF技术。
机译:适用于SiC器件的JTE剂量级和表面电荷耐受性提高的阶梯双区JTE
机译:步双区-JTE为SiC器件具有耐受性增加至JTE剂量和表面电荷