机译:用于高压超接线功率MOSFET的单事件栅极破裂硬化结构
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
Vanderbilt Univ Dept Elect Engn & Comp Sci Nashville TN 37235 USA;
Inst Space Device Engn Branch Joint Stock Co United Rocket & Space Corp Branch URSC ISDE Moscow 121059 Russia;
Inst Space Device Engn Branch Joint Stock Co United Rocket & Space Corp Branch URSC ISDE Moscow 121059 Russia;
Inst Space Device Engn Branch Joint Stock Co United Rocket & Space Corp Branch URSC ISDE Moscow 121059 Russia;
Inst Space Device Engn Branch Joint Stock Co United Rocket & Space Corp Branch URSC ISDE Moscow 121059 Russia;
Inst Space Device Engn Branch Joint Stock Co United Rocket & Space Corp Branch URSC ISDE Moscow 121059 Russia;
Arizona State Univ Sch Elect Comp & Energy Engn Tempe AZ 85287 USA;
Logic gates; MOSFET; Ions; Transient analysis; Simulation; Neck; Silicon; Heavy ion; power metal-oxide-semiconductor field effect transistor (MOSFET); single-event burnout (SEB); single-event effect (SEE); single-event gate rupture (SEGR); single-event hardening; super-junction (SJ); technology computer-aided design (TCAD) simulation;
机译:使用辐射硬化的条纹电池功率MOSFET结构进行单事件门破裂的仿真研究
机译:重新发现功率MOSFET中的单事件栅极破裂机制
机译:离子原子数对功率MOSFET单事件栅极破裂(SEGR)磁化率的影响
机译:重新发现功率MOSFET中的单事件栅极破裂机制
机译:用于高压碳化硅电源MOSFET的门控方法
机译:用于高频脉冲回波仪表的高压功率放大器的功率MOSFET线性化器
机译:离子原子数对功率MOSFET单事件栅极破裂(SEGR)磁化率的影响
机译:离子原子序数对功率mOsFET单事件栅极断裂(sEGR)敏感性的影响。