首页> 中文期刊> 《中国物理快报:英文版》 >A Novel Interface-Gate Structure for SOI Power MOSFET to Reduce Specific On-Resistance

A Novel Interface-Gate Structure for SOI Power MOSFET to Reduce Specific On-Resistance

         

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  • 来源
    《中国物理快报:英文版》 |2015年第9期|171-173|共3页
  • 作者单位

    College of Communication Engineering, Chongqing University, Chongqing 400044;

    National Laboratory of Analogue Integrated Circuits, No.24 Research Institute of China Electronics Technology Group Corporation, Chongqing 400060;

    College of Communication Engineering, Chongqing University, Chongqing 400044;

    College of Communication Engineering, Chongqing University, Chongqing 400044;

    College of Communication Engineering, Chongqing University, Chongqing 400044;

    College of Communication Engineering, Chongqing University, Chongqing 400044;

    College of Communication Engineering, Chongqing University, Chongqing 400044;

    College of Communication Engineering, Chongqing University, Chongqing 400044;

  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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