Experimental Investigation of As Preamorphization Implant on Electrical Property of Ti-Based Silicide Contacts

摘要

The impact of As preamorphization implant (PAI) on specific contact resistivity (rho(c)) is investigated for Tibased-Ohmic contactson n+-Si in this article. The rho(c) value of TiSix/n(+)-Si contacts is greatly improved with low-dose As PAI whereas this improvement is impaired with increased dose of As PAI. The rho(c) results from the joint effort of the reduction of effective Schottky barrier height (SBH) to electrons (phi(bn,eff)), retardation of Ti silicidation, and annihilation of end-of-range (EOR) defects. Besides, the interfacial microstructures of TiSix/n(+)-Si affect rho(c), correlated with the post metal anneal (PMA).