Density-of-States-Based Physical Model for Ink-Jet Printed Thiophene Polymeric TFTs

摘要

We proposed a physical model for ink-jet printed polymeric thin-film transistors (PTFTs) all over the sub- and above-threshold regions by using an effective carrier density. The nonlinearity under the low lateral electric field in the printed thiophene PTFTs was reproduced by applying the back-to-back Schottky diode model based on simple Poole-Frenkel (PF) mobility formalism. The analytical ${I}{-}!{V}$ model supplemented with ${C}{-}!{V}$ model in a single framework was also verified by successfully reproducing the measured characteristics of TFTs with three different thiophene polymeric channel materials. Additionally, we applied the physics-based analytical model on the inkjet-printed PTFT-based inverter and confirmed that the proposed models could predict the inverter circuitWe proposed a physical model for ink-jet printed polymeric thin-film transistors (PTFTs) all over the sub- and above-threshold regions by using an effective carrier density. The nonlinearity under the low lateral electric field in the printed thiophene PTFTs was reproduced by applying the back-to-back Schottky diode model based on simple Poole-Frenkel (PF) mobility formalism. The analytical I-V model supplemented with C-V model in a single framework was also verified by successfully reproducing the measured characteristics of TFTs with three different thiophene polymeric channel materials. Additionally, we applied the physics-based analytical model on the inkjet-printed PTFT-based inverter and confirmed that the proposed models could predict the inverter circuit characteristics of the gain and static noisemargin (SNM) based on the physical parameters.