In2O3/TiO2 Heterostructure for Highly Responsive Low-Noise Ultraviolet Photodetector

摘要

High-performance metal-semiconductor-metal ultraviolet (UV) photodetector was fabricated based on In2O3/TiO2 heterostructure. The In2O3/TiO2 heterostructure photodetector exhibits the maximum responsivity of 799.5 A/W and Gain of 3541.8 under 280 nm wavelength of illumination at 2 V, which is eight times higher than the In2O3 photodetector. The In2O3/TiO2 photodetector exhibited lower noise-equivalent power (5.5 x 10(-12) W. Hz(-1/2)) and higher detectivity (1.1 x 10(12) cm.Hz(1/2) W-1) as compared to In2O3 photodetector. Flicker noise dominated the In2O3/TiO2 photodetector with a corner frequency of 9 Hz. The enhanced performance of the device is assigned to improved electron-hole dissociation efficiency in In2O3 via electron transfer from In2O3 to TiO2. This heterostructure-based photodetector with improved performance can pave the way for efficient UV photodetection applications.