机译:h-BN封装石墨烯场效应晶体管的射频性能预测和稳定性权衡
Univ Autonoma Bacelona, Dept Engn Elect, Cerdanyola Del Valles 08193, Spain;
Univ Autonoma Bacelona, Dept Engn Elect, Cerdanyola Del Valles 08193, Spain;
Univ Salamanca, Dept Fis Aplicada, E-37008 Salamanca, Spain;
Univ Salamanca, Dept Fis Aplicada, E-37008 Salamanca, Spain;
Univ Salamanca, Dept Fis Aplicada, E-37008 Salamanca, Spain;
Univ Autonoma Bacelona, Dept Engn Elect, Cerdanyola Del Valles 08193, Spain;
Graphene field-effect transistors (GFETs); hexagonal boron nitride (h-BN) encapsulated graphene; negative differential resistance (NDR); radio frequency (RF); stability;
机译:射频石墨烯场效应晶体管的稳定性
机译:六边形氮化物上支撑的石墨烯场效应晶体管的缩放:射频稳定性是限制因子
机译:蓝宝石衬底上外延石墨烯场效应晶体管的射频性能
机译:双栅扩展源极隧穿场效应晶体管的射频和稳定性能分析
机译:使用金属 - 铁电半导体场效应晶体管进行射频和数字电路的设计,测试和建模
机译:石墨烯电解质栅场效应晶体管的频率响应
机译:H-BN封装石墨烯场效应晶体管的射频性能投影和稳定性折衷