Radio-Frequency Performance of Epitaxial Graphene Field-Effect Transistors on Sapphire Substrates

著录项

• 来源
  《中国物理快报：英文版》 |2014年第7期|210-213|共4页
• 作者

  LIU Qing-Bin; YU Cui; LI Jia; SONG Xu-Bo; HE Ze-Zhao; LU Wei-Li; GU Guo-Dong;

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• 作者单位

  National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051;

  National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051;

  National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051;

  National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051;

  National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051;

  National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051;

  National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
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