High-Source–Drain Voltage-Induced Reliability Issues of Sub-28-nm Node MOSFET’s Application in Resistive-Type Nonvolatile Memory Array

摘要

In this brief, we investigate the reliability issues of MOSFETs with bulk 28-nm technology for its possible application in resistive-type nonvolatile memory (RNVM). The impact of electrical stress on transistors when working in the 1T1R array cells is discussed. It is found that the high source-drain voltage bias during the 1T1R array operation is the main reason causing the MOSFET degradation. Furthermore, by comparing the electrical characteristics of MOSFETs with different channel lengths, it is confirmed that the degradation is caused by high-energy electrons drifting from the source side to the drain end under a high electric field. As a result, this issue will be more serious as the gate length continues to scale down. An ultralow operation voltage RNVM is required for a better lifetime if RNVM is embedded in sub-28-nm technologies.