Applications of resonant-tunneling field-effect transistors

摘要

Flip-flop and frequency-doubling operations are demonstrated, using a simple circuit that combines a resistor with a three-terminal negative-resistance device. The device is a series integration of resonant-tunneling heterostructure with a field-effect transistors. Results, obtained at 77 K, are presented for two samples that were grown by metalorganic chemical vapor deposition.