Modeling of the 1/f noise overshoot in short-channel MOSFETs locally degraded by hot-carrier injection

摘要

On the basis of previous results concerning the 1/f noise in electrically stressed MOS transistors and the characterization of aged MOSFETs, the authors present a theoretical model for the flicker noise in nonhomogeneous short-channel MOS transistors operated in the ohmic region. When applied to hot-carrier-induced degradation, a simple two-region approximation of this model is shown to account for the existence of a noise peak (overshoot) near the threshold voltage, similar to the transconductance overshoot already observed. A two-dimensional simulation makes it possible to detail the influence of the gate bias, the distance over which the interface states (or traps) are generated, and their density. The 1/f noise overshoot appears to be more sensitive to aging conditions than transconductance overshoot.