...
首页> 外文期刊>IEEE Electron Device Letters >Monolithic integration of 5 V CMOS and high-voltage devices
【24h】

Monolithic integration of 5 V CMOS and high-voltage devices

机译:5 V CMOS和高压器件的单片集成

获取原文
获取原文并翻译 | 示例

摘要

A fully CMOS-compatible HVIC technology has been developed that features 5 V high-performance digital CMOS with high-voltage devices of more than 400 V. This technology uses only one or two masks in addition to standard p-well CMOS technology. Design optimization has been achieved to meet the needs of both CMOS and high-voltage devices. A large number of different devices are available in this technology, including bipolar transistors, lateral MOS gate power devices, and high-voltage p-channel power devices.
机译:已开发出一种完全兼容CMOS的HVIC技术,该技术具有5 V高性能数字CMOS和400 V以上的高压器件。除标准p阱CMOS技术外,该技术仅使用一个或两个掩模。已经实现了设计优化,可以同时满足CMOS和高压设备的需求。这项技术中有很多不同的器件,包括双极晶体管,横向MOS栅极功率器件和高压p沟道功率器件。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号