SOI-CMOS PLATFORM FOR MONOLITHICALLY INTEGRATING HIGH-VOLTAGE DRIVER CIRCUITS WITH BULK-MICROMACHINED ACTUATORS

摘要

We present a newly developed technology platform for monolithically integrating high voltage DMOS (Double-diffused Metal Oxide Semiconductor) circuits upwards of 40V with bulk-micromachined actuators (XY-stage) using both the top and the bottom surfaces of an SOI (Silicon-on-Insulator) wafer. Driver circuits were pre-fabricated on an 8-(mu)m-thick SOI wafer by the DMOS processes, after which MEMS electrostatic actuators were integrated into the identical SOI layer as well as the substrate by post-processing using DRIE (Deep Reactive Ion Etching). Thanks to this monolithic integration technique, multi-layered high-aspect-ratio structures were produced.