InP/InGaAs heterojunction bipolar transistors grown by gas-source molecular beam epitaxy with carbon-doped base

摘要

The first N-p-n InP/InGaAs heterojunction bipolar transistors (HBTs) with p-type carbon doping in InGaAs are reported. P-type carbon doping in the InGaAs base has been achieved by gas-source molecular beam epitaxy (GSMBE) using carbon tetrachloride (CCl/sub 4/) as the dopant source. The resulting hole concentration in the base was 1*10/sup 19/ cm/sup -3/. HBTs fabricated using material from this growth method display good I-V characteristics with DC current gain above 500. This verifies the ability to use carbon doping to make a heavily p-type InGaAs base of an N-p-n HBT.