A vertically integrated bipolar storage cell in 6H silicon carbide for nonvolatile memory applications

摘要

A vertically integrated one transistor memory cell, in which an n-p-n bipolar access transistor is merged with a p-n-p storage capacitor, based on the wide-bandgap semiconductor silicon carbide (SiC), results in a greatly reduced thermal generation rate. Extrapolation of charge recovery data obtained at elevated temperatures suggests a room temperature recovery time of over 10/sup 6/ years.