A new DC Drain-Current-Conductance method (DCCM) for the characterization of effective mobility (/spl mu//sub eff/) and series resistances (R/sub s/, R/sub d/) of fresh and hot-carrier stressed graded junction MOSFETs

摘要

A simple new DC technique is developed to extract the gate bias dependent effective channel mobility (u/sub eff/) and series resistances (R/sub s/ and R/sub d/) of graded junction n- and p-channel MOSFETs. This technique is found to be accurate and effective for devices with differing channel lengths and also for devices after nonuniform hot-carrier degradation. The parameter values extracted provide further insight into the damage mechanisms of hot-carrier stressed graded junction nMOSFETs and are usable in circuit and reliability simulation. This technique is especially useful for the optimization of hot-carrier resistant structures of submicrometer MOSFETs.