0.3-/spl mu/m gate length p-channel AlGaAs/InGaAs heterostructure field effect transistors with high cut-off frequency

摘要

P-channel Heterostructure Field Effect Transistors (HFETs) with a 0.3-/spl mu/m gate were fabricated by Mg ion implantation. The maximum transconductance was 68 mS/mm and there was no serious drain or gate leakage current, regardless of this short gate length. The gate turn on voltage (@I/sub gs/=-1 /spl mu/A//spl mu/m) was -2.1 V and its absolute value was large enough for use in complementary HFETs. S-parameters measurements showed a very high cut-off frequency of over 10 GHz. Results indicated the superiority of less-diffusive Mg ion implantation for forming p/sup +/-layer in p-channel HFETs.