A novel flash EEPROM cell based on trench technology for integration within power integrated circuits

摘要

A flash EEPROM suitable for integration within power integrated circuits (PIC's) is presented. The EEPROM cell uses a trench floating gate to give a large gate charge while using no more silicon area than a conventional flash EEPROM cell. The cell shows good immunity against the induced disturbance voltages which are present in a PIC, and the storage lifetime is greater than ten years at a reading voltage of V/sub D/=2.2 V.