0.15 /spl mu/m passivated InP-based HEMT MMIC technology with high thermal stability in hydrogen ambient

摘要

The effect of thermal stress on InP-based HEMT MMIC with Ti-Pt-Au gate metallization in N/sub 2/ and H/sub 2/ forming gas is reported. The importance of stabilization bake at high temperature under nitrogen to stabilize the threshold voltage and device parameters is demonstrated. In addition, through thermal stress at 270/spl deg/C with hydrogen ambient, we found, that our InP based HEMT devices and MMICs with Ti-Pt-Au gate metallization are not sensitive to hydrogen. To our knowledge, this is the first demonstration of hydrogen insensitive FET's and MMIC's with Ti-Pt-Au gate metallization.