Inversion-layer induced body current in SOI MOSFETs with body contacts

摘要

This letter investigates the body current of thin silicon-on-insulator MOSFETs with body contacts using H-gate and T-gate structures. Due to tunneling between the inversion layer and body contacts, the extra body current was measured and confirmed by the floating-source measurement technique. The drain current at saturation is increased due to the extra body current, which may result in smaller output resistance. A measurement example is also demonstrated.