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High Drive-Current Electrically Induced Body Dynamic Threshold SOI MOSFET (EIB-DTMOS) with Large Body Effect and Low Threshold Voltage

机译：具有大体效应和低阈值电压的高驱动电流电感应体动态阈值sOI mOsFET（EIB-DTmOs）

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Makoto Takamiya; Toshiro Hiramoto;
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年度 2015
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1. On the g_m/I_D-based approaches for threshold voltage extraction in advanced MOSFETs and their application to ultra-thin body SOI MOSFETs [J] . T. Rudenko, M.K. Md Arshad, J.-P. Raskin, Solid-State Electronics . 2014,第JULa期

机译：基于g_m / I_D的高级MOSFET阈值电压提取方法及其在超薄体SOI MOSFET中的应用
2. A Novel Low-Voltage N-Channel Heterostructure Dynamic Threshold Voltage MOSFET (N-HDTMOS) With p-Type Doped SiGe Body [J] . Takahiro Kawashima, Yoshihiro Kara, Yoshihiko Kanzawa, IEEE Electron Device Letters . 2004,第1期

机译：具有p型掺杂SiGe体的新型低压N沟道异质结构动态阈值电压MOSFET（N-HDTMOS）
3. Impact of SOI thickness fluctuation on threshold voltage variation in ultra-thin body SOI MOSFETs [J] . Tsutsui G., Saitoh M., Nagumo T., IEEE transactions on nanotechnology . 2005,第3期

机译：SOI厚度波动对超薄体SOI MOSFET阈值电压变化的影响
4. High performance electrically induced body dynamic threshold SOI MOSFET (EIB-DTMOS) with large body effect and low threshold voltage [C] . Takamiya, M., Hiramoto, Electron Devices Meeting, 1998. IEDM '98 Technical Digest., International . 1998

机译：具有大体效应和低阈值电压的高性能电感应体动态阈值SOI MOSFET（EIB-DTMOS）
5. Low-voltage SOI MOSFET with suppressed floating body effects [D] . Ren, John Zhizhang 1999

机译：具有抑制的浮体效应的低压SOI MOSFET
6. Electrical stimulation of low-threshold afferent fibers induces a prolonged synaptic depression in lamina II dorsal horn neurons to high-threshold afferent inputs in mice [O] . Andrei D. Sdrulla, Qian Xu, Shao-Qiu He, -1

机译：低阈值传入纤维的电刺激可导致层板II背角神经元向小鼠高阈值传入输入的长时间突触抑制
7. A Study on Electrical Characterization of Surface Potential and Threshold Voltage for Nano Scale FDSOI MOSFET [O] . Chandra Shakher Tyagi, R L. Sharma, Prashant Mani 2018

机译：用于纳米尺度FDSOI MOSFET的表面电位电函数和阈值电压的电学特性研究
8. Influence of the Polysilicon Gate on the Random Dopant Induced Threshold Voltage Fluctuations in Sub 100 nm MOSFETS with Thin Gate Oxides [R] . Asenov, Asen, Saini, S. 2000

机译：多晶硅栅极对具有薄栅氧化层的亚100nm mOsFET中随机掺杂诱导阈值电压波动的影响

High Drive-Current Electrically Induced Body Dynamic Threshold SOI MOSFET (EIB-DTMOS) with Large Body Effect and Low Threshold Voltage

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