Performance Gain Through Dynamic Control of Device Geometry: Nanoelectromechanical Carbon Nanotube-Based Switch

摘要

Performance advantages resulting from a dynamic control of device geometry in a nanoscale nanoelectromechanical systems device are discussed. Specifically, a nanoscale three-terminal carbon nanotube-based relay in a semiclassical analysis is investigated. As an illustration, the authors estimate the optimal subthreshold swing S of the system and find that it can be made superior to that of the ideal MOSFET; values in the range S=20-60mV/dec can be obtained with typical parameter values