700-V 1.0-$hboxmOmega cdot hboxcm^2$Buried Gate SiC-SIT (SiC-BGSIT)

摘要

Ultralow on-resistance silicon carbide static induction transistors with buried gate structures (SiC-BGSITs) have been successfully developed through innovative fabrication process. A submicrometer buried p+ gate structure was fabricated by the combination of submicrometer trench dry etching and epitaxial growth on a trench structure. The breakdown voltage VBR and specific on-resistance RonS of the fabricated SiC-BGSIT were 700 V at a gate voltage VG=-12V, and 1.0 mOmegamiddotcm2 at a current density JD=200A/cm2 and VG=2.5V, respectively. This RonS is the lowest on-resistance for ~600 V class power switching devices, including other SiC devices and GaN HEMTs