A Novel Orthogonal Gate EDMOS Transistor With Improved $dv/dt$ Capability and Figure of Merit (FOM)

摘要

A transistor with an orthogonal gate (OG) electrode is proposed to improve $dv/dt$ capability, reduce the gate-to-drain overlap capacitance $(C_{rm gd})$, and improve figure of merit (FOM). The OG has both a horizontal section and a vertical section for MOS gate control. This 30-V device is implemented in a 0.18- $muhbox{m}$ CMOS-compatible process. Comparing to a conventional extended drain MOSFET transistor with the same voltage rating and device size, four times higher $dv/dt$ capability and 53% improvement in FOM are observed.