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Gate-all-around field effect transistor having stacked U shaped channels configured to improve the effective width of the transistor
Gate-all-around field effect transistor having stacked U shaped channels configured to improve the effective width of the transistor
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机译:具有堆叠U形通道的门 - 全部围绕场效应晶体管,其配置成改善晶体管的有效宽度
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摘要
A method of fabricating a semiconductor device is described. The method includes forming a stack of sacrificial layers on a substrate. A U-shaped trench is formed in the stack of the sacrificial layers. A first U-shaped channel layer is deposited in the U-shaped trench. A first U-shaped sacrificial layer is conformally formed covering the U-shaped channel layer. A second U-shaped channel layer is conformally deposited covering the first U-shaped sacrificial layer. A gate is formed around the first and the second U-shaped channel layers.
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