Excellent Switching Uniformity of Cu-Doped $hbox{MoO}_{x}/hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications

摘要

We have investigated a Cu-doped MoOx/GdOx bilayer film for nonvolatile memory applications. By adopting an ultrathin GdOx layer, we obtained excellent device characteristics such as resistance ratio of three orders of magnitude, uniform distribution of set and reset voltages, switching endurance up to 104 cycles, and ten years of data retention at 85degC. By adopting bilayer films of Cu-doped MoOx/GdOx, a local filament was formed by a two-step process. Improved memory characteristics can be explained by the formation of nanoscale local filament in the ultrathin GdOx layer.