Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device

摘要

We propose a new type of graphene-based transistor intended to allow lower voltage, lower power operation than possible with Complementary Metal–Oxide–Semiconductor (CMOS) Field-Effect Transistors. Increased energy efficiency is not only important for its own sake, but is also necessary to allow continued device scaling and the resulting increase in computational power in CMOS-like logic circuits. We describe the basic device structure and physics and predicted current–voltage characteristics. Advantages over CMOS in terms of lower voltage and power are discussed.