High-Quality for Low-Voltage High-Speed High-Temperature (Up to 250 ) Nonvolatile Memory Technology

摘要

We report the properties of a MANAS $(hbox{Metal}/break hbox{Al}_{2} hbox{O}_{3}/hbox{Nitride}/hbox{Al}_{2}hbox{O}_{3}/hbox{Si})$ charge-trap memory cell structure, in which both the tunnel and the blocking dielectrics are made of high-quality $ hbox{Al}_{2}hbox{O}_{3}$ deposited by the molecular-atomic-deposition (MAD) technique. Compared with state-of-the-art MANOS $(hbox{Metal}/hbox{Al}_{2}hbox{O}_{3}/ hbox{Nitride}/hbox{SiO}_{2}/hbox{Si})$ and its derivatives, the MANAS structure features the following: 1) low-voltage/high-speed operation; 2) fabrication simplicity; and 3) high-temperature retention up to 250 $^{circ}hbox{C}$. These superb features of the MANAS memory cell structure can be attributed to the nearly trap-free nature of the $ hbox{MAD}_hbox{Al}_{2}hbox{O}_{3}$, as well as its relatively high conduction band offset and low valence band offset.