Horizontal Current Bipolar Transistor With a Single Polysilicon Region for Improved High-Frequency Performance of BiCMOS ICs

摘要

A new horizontal current bipolar transistor (HCBT) with a single polysilicon region and a CMOS gate polysilicon near the $hbox{n}^{+}$ emitter region is integrated with CMOS technology with the addition of two or three masks (three or four masking steps) and a small number of additional fabrication steps. The single-poly HCBT with an optimized collector exhibits $f_{T}$ and $f_{max}$ of 51 and 61 GHz, respectively, and an $f_{T}BV_{rm CEO}$ product of 173 $hbox{GHz} cdot hbox{V}$, which are the best reported HCBT characteristics to date and among the highest performance Si BJTs. An HCBT with only two additional masks to CMOS has $f_{T}$ and $f_{max}$ of 43 and 53 GHz, respectively, and an $f_{T}BV_{rm CEO}$ product of 120 $hbox{GHz} cdot hbox{V}$. The developed innovative fabrication techniques enable a very low-cost BiCMOS platform for wireless communication circuits.