150-GHz RF SOI-CMOS Technology in Ultrathin Regime on Organic Substrate

摘要

This letter provides an experimental demonstration of high-performance industrial MOSFETs thinned down to 5.7 $muhbox{m}$ and transferred onto a 125- $muhbox{m}$-thick polyethylene naphthalate foil. The die stack transferred onto the organic substrate comprises the 200-nm-thick active layer and the 5.5- $muhbox{m}$-thick interconnection multilayer stack resulting in a light, compact, and bendable thin film. We unveil that dc and RF performances are invariant even for ultimate thinning down to the buried oxide layer. Furthermore, n-MOSFET performance is improved by $hbox{1.5}times$ compared with previous work, and the first demonstration of 100-GHz p-MOSFETs on an organic substrate is presented. Unity-current-gain cutoff and maximum oscillation frequencies as high as 150/160 GHz for n-MOSFETs and 100/130 GHz for p-MOSFETs on a plastic substrate have been measured, respectively.