Ge/SiGe Quantum Well p-i-n Structures for Uncooled Infrared Bolometers

摘要

The temperature dependence of current is investigated experimentally for silicon–germanium (Si-Ge) multi-quantum-well p-i-n devices on Si substrates as uncooled bolometer active layers. Temperature coefficient of resistance values as high as $-$5.8%/K are recorded. This value is considerably higher than that of even commercial bolometer materials in addition to being well above the previous efforts based on CMOS compatible materials.