Zero-Mask Contact Fuse for One-Time-Programmable Memory in Standard CMOS Processes

摘要

This letter describes the formation of one-time-programmable (OTP) memory using standard contact fuse and polysilicon diode in a standard CMOS technology. Programming of the contact fuse is achieved by applying a high current pulse to destroy the contact. Compared with other existing OTP technologies, the proposed approach has the advantage of zero additional mask, no additional processing step, compact structure, and low programming voltage. The described OTP has been demonstrated in a 0.18-$muhbox{m}$ CMOS technology from TSMC with a cell size of 2.33 $muhbox{m}^{2}$ . The contact fuse can be programmed with a voltage of 3 V and a current of 2.4 mA.