Performance Improvement of a Virtual-Ground Nonvolatile Charge-Trap Storage nor-Type Memory Cell With Optimized Junction Dosage for 45-nm Generation Node

摘要

A variety of cell performances, such as program speed, second-bit effect, program disturbance along the channel direction (X-disturbance), and random telegraph noise (RTN), are investigated extensively under different junction dosages in a virtual-ground charge-trap nor array of 45-nm technology. Junction profiles and the location of programmed charges are compared by means of a gate-induced drain leakage scheme. Experiments reveal that the source/drain dosage beneath gate edges affects the program speed, injected charge distribution, X-disturbance induced by secondary impact ionization, and RTN performance.