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首页> 外文期刊>Electron Device Letters, IEEE >Characterization of Copper Electromigration Dependence on Selective Chemical Vapor Deposited Cobalt Capping Layer Thickness
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Characterization of Copper Electromigration Dependence on Selective Chemical Vapor Deposited Cobalt Capping Layer Thickness

机译:取决于选择性化学气相沉积的钴封盖层厚度的铜电迁移特性

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摘要

Co films with various thicknesses were selectively deposited as Cu capping layers by chemical-vapor-deposition technique. Selectivity of the Co deposition between Cu and dielectric surfaces was improved by raising the deposition pressure. Degree of electromigration (EM) resistance enhancement was observed to be dependent on the deposited Co thickness. Compared to the no-Co control, significant EM lifetime enhancement was observed when the Co cap is thicker than 6 nm.
机译:通过化学气相沉积技术选择性沉积各种厚度的Co膜作为Cu覆盖层。通过提高沉积压力,可以改善在Cu和介电表面之间进行Co沉积的选择性。观察到电迁移(EM)电阻的增强程度取决于沉积的Co厚度。与无Co对照相比,当Co盖厚度大于6 nm时,观察到EM寿命显着延长。

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