Correlated Flicker Noise and Hole Mobility Characteristics of $(hbox{110})/langlehbox{110}rangle$ Uniaxially Strained SiGe FINFETs

摘要

Hole mobility and flicker noise characteristics of uniaxially strained $( hbox{110})/langlehbox{110}rangle$ $hbox{Si}_{0.75} hbox{Ge}_{0.25}$ pFINFETs $(hbox{SSGOI}_{0.25})$ are investigated in this letter. Equivalent gate referred flicker noise in $ hbox{SSGOI}_{0.25}$ is dominated by correlated number and mobility fluctuation in the low-bias regime and Hooge mobility fluctuation in the high-bias regime. The extracted Hooge parameter in $hbox{SSGOI}_{0.25}$ and in Si pFINFETs is $hbox{10}^{-5}$ and $ hbox{10}^{-4}$, respectively. The lower value of the Hooge parameter in $hbox{SSGOI}_{0.25}$ pFINFETs is attributed to improved phonon-limited mobility compared to the SOI pFINFETs. $hbox{SSGOI}_{0.25} hbox{FINFETs}$ are found to exhibit the lowest equivalent gate referred flicker noise among any nonplanar devices reported to date.