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Multilayer Graphene Oxide/Cadmium Selenide Quantum-Dot-Coated Titanium Dioxide Heterojunction Solar Cell

机译:多层氧化石墨烯/硒化镉量子点涂覆的二氧化钛异质结太阳能电池

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摘要

We demonstrate a heterojunction solar cell employing multilayer graphene oxide (ML-GO) as the hole-conducting layer and cadmium selenide (CdSe) quantum-dot-coated titanium dioxide $( hbox{TiO}_{2})$ as the photoactive material. Multilayer graphene, synthesized by a chemical-vapor-deposition technique, is treated with low-power (25-W) oxygen plasma ( $sim$100 sccm) to convert into ML-GO, as confirmed by Raman spectroscopy. The ML-GO exhibits an optical bandgap of 3.6 eV extracted from UV–visible absorption spectroscopy. The heterojunction solar cell is implemented with a stacked heterostructure of $hbox{ITO/TiO}_{2}/ hbox{CdSe/ML-GO/Pt}$, yielding a short-circuit current density of 11.2 $hbox{mA/cm}^{2}$, an open-circuit voltage of 652 mV, and a photoconversion efficiency of 4.1% under a standard AM 1.5 illumination condition.
机译:我们演示了采用多层氧化石墨烯(ML-GO)作为空穴传导层和硒化镉(CdSe)量子点涂覆的二氧化钛$(hbox {TiO} _ {2})$作为光敏材料的异质结太阳能电池。通过化学气相沉积技术合成的多层石墨烯经过低功率(25 W)氧等离子体(sim $ 100 sccm)处理,转化为ML-GO,这是拉曼光谱法证实的。 ML-GO从紫外可见吸收光谱中提取的光学带隙为3.6 eV。异质结太阳能电池的堆叠异质结构为$ hbox {ITO / TiO} _ {2} / hbox {CdSe / ML-GO / Pt} $,产生的短路电流密度为11.2 $ hbox {mA / cm } ^ {2} $,在标准AM 1.5照明条件下的开路电压为652 mV,光转换效率为4.1%。

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