Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination

摘要

High-performance AlGaN/GaN diodes are realized on 8-in Si wafers with Au-free CMOS-compatible technology. The diodes are cointegrated on the same substrate together with the AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors and with only one extra lithographic step. The diode anode and the transistor gate are processed together and the same metallization is used for both, avoiding extra metal deposition dedicated to the Schottky junction. A gated edge termination allows obtaining low reverse leakage current (within 1 $mu{rm A}/{rm mm}$ at ${-}{rm 600}~{rm V}$), which is several orders of magnitude lower than the one of conventional Schottky diodes processed on the same wafer. Recess is implemented at the anode, resulting in low diode turn-on voltage values $({<}{rm 0.5}~{rm V})$.