Numerical analysis of the reverse blocking enhancement in High-K passivation AlGaN/GaN Schottky barrier diodes with gated edge termination

摘要

We conducted a numerical analysis on high-K dielectric passivated AlGaN/GaN Schottky barrier diodes (HPG-SBDs) with a gated edge termination (GET). The reverse blocking characteristics were significantly enhanced without the stimulation of any parasitic effect by varying the dielectric thickness d(ge) under the GET, thickness T-B and dielectric constant epsilon(r) of the high-K passivation layer. The leakage current was reduced by increasing epsilon(r) and decreasing d(ge). The breakdown voltage of the device was enhanced by increasing epsilon(r) and T-P. The highest breakdown voltage of 970 V and the lowest leakage current of 0.5 nA/mm were achieved under the conditions of epsilon(r) = 80, T-P = 800 nm, and d(ge) = 10 nm. C-V simulation revealed that the HPG-SBDs induced no parasitic capacitance by comparing the integrated charges of the devices with different high-K dielectrics and different d(ge). (C) 2017 Elsevier Ltd. All rights reserved.