Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

摘要

In this letter, a double-active-layer $({rm Zr}{:}{rm SiO}_{x}/{rm C}{:}{rm SiO}_{x})$ resistive switching memory device with a high on/off resistance ratio and small working current (0.02 mA), is presented. Through the analysis of Raman and Fourier transform infrared spectroscopy spectra, we find that graphene oxide exists in the ${rm C}{:}{rm SiO}_{x}$ layer. It can be observed that ${rm Zr}{:}{rm SiO}_{x}/{rm C}{:}{rm SiO}_{x}$ structure has superior switching performance and higher stability compared with the single-active-layer $({rm Zr}{:}{rm SiO}_{x})$ structure, which is attributed to the existence of graphene oxide flakes formed during the sputter process. $I-V$ characteristics under a series of increasing temperature were analyzed to testify the carrier hopping distance variation, which is further verified by our graphene oxide redox reaction model.