Low Temperature Improvement Method on ${rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices

摘要

To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide $({rm SCCO}_{2})$ fluid is used as a low temperature treatment. In this letter, the ${rm Zn{:}SiO}_{x}$ thin films are treated by ${rm SCCO}_{2}$ fluid mixed with pure water. After ${rm SCCO}_{2}$ fluid treatment, the resistive switching qualities of the ${rm Zn{:}SiO}_{x}$ thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the ${rm SCCO}_{2}$-treated ${rm Zn{:}SiO}_{x}$ thin film is a promising material for RRAM applications due to its compatibility with portable flat panel display.