Modeling Erratic Bits Temperature Dependence for Monte Carlo Simulation of Flash Arrays

摘要

The erratic bits phenomenon has been extensively characterized in the last decade due to its massive burden on the performance and reliability of Flash memory devices. From a statistical standpoint, it has been possible to describe a Markov-chain-based model of this phenomenon in large arrays suitable for Monte Carlo simulation. This model, however, is based on the assumption of complete independence of the probabilistic parameters characterizing each erratic bit from the testing temperature. The goal of this letter is to provide, through the electrical characterization of nor Flash arrays, the statistical tools necessary to perform a correct simulation of the erratic bits under different temperature conditions.