Stretchable Organic Thin-Film Transistors Fabricated on Wavy-Dimensional Elastomer Substrates Using Stiff-Island Structures

摘要

Stretchable organic thin-film transistors (OTFTs) were fabricated on the polydimethysiloxane (PDMS) elastomer substrates by employing the wavy-dimensional and polyimide stiff-island structures. A low-temperature solution process was also designed to obtain high strain profiles. The endurable maximum strains were estimated to be 2.28, 9.70, and 9.32% for the OTFTs formed on the flat, 1D-, and 2D-wavy PDMS elastomers, respectively. The field-effect mobilities were obtained to be (5sim7 times 10^{mathrm {mathbf {-4}}}) cm (^{mathrm {mathbf {2}}}) V (^{mathrm {mathbf {-1}}}) s (^{mathrm {mathbf {-1}}}) for all devices and they did not exhibit any degradation under the stretchable conditions before the fracture. The results suggest that the proposed methodologies were quite suitable for high-performance stretchable OTFTs.